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this is preliminary information on a new product now in development or undergoing evaluation. details are subject to change without notice. march 2012 doc id 022821 rev 1 1/12 12 STD4NK100Z n-channel 1000 v, 5.6 , 2.2 a supermesh? power mosfet zener-protected in dpak package datasheet ? preliminary data features extremely high dv/dt capability 100% avalanche tested gate charge minimized very low intrinsic capacitance very good manufacturing repeatability applications switching application ? automotive description this device is an n-channel zener-protected power mosfet developed using stmicroelectronics? supermesh? technology, achieved through optimization of st?s well established strip-based powermesh? layout. in addition to a significant reduction in on- resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. figure 1. internal schematic diagram order code v dss r ds(on) max i d STD4NK100Z 1000 v < 6.8 2.2 a dpak 1 3 2 tab d(2 or tab) g(1) s(3) am01476v1 table 1. device summary order code marking package packaging STD4NK100Z 4nk100z dpak tape and reel www.st.com
contents STD4NK100Z 2/12 doc id 022821 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
STD4NK100Z electrical ratings doc id 022821 rev 1 3 /12 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 1000 v v gs gate-source voltage 3 0v i d drain current (continuous) at t c = 25 c 2.2 a i d drain current (continuous) at t c =100 c 1 a i dm (1) 1. pulse width limited by safe operating area drain current (pulsed) 8.8 a p tot total dissipation at t c = 25 c 90 w derating factor 0.72 w/c v esd(g-s) gate source esd (hbm-c=100pf, r=1.5 k ) 3 000 v dv/dt (2) 2. i sd 2.2 a, di/dt 200 a/s, v dd v (br)dss , t j t jmax. peak diode recovery voltage slope tbd v/ns t j t stg operating junction temperature storage temperature -55 to 150 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 1. 3 9c/w r thj-pcb (1) 1. when mounted on 1inch2 fr-4 board, 2 oz cu thermal resistance junction-pcb max 50 c/w table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t jmax ) 2.2 a e as single pulse avalanche energy (starting t j =25 c, i d =i ar , v dd =50 v) tbd mj
electrical characteristics STD4NK100Z 4/12 doc id 022821 rev 1 2 electrical characteristics (t case =25 c unless otherwise specified) table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 1000 v i dss zero gate voltage drain current (v gs = 0) v ds = 1000 v, v ds = 1000 v, tc = 125 c 1 50 a a i gss gate body leakage current (v gs = 0) v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 50 a 33 .75 4.5 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 1.1 a 5.6 6.8 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25 v, f=1 mhz, v gs =0 - 601 5 3 12 - pf pf pf c oss. eq (1) 1. c oss eq. is defined as a constant equivalent capac itance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent output capacitance v gs =0, v ds =0 v to 800 v - tbd - pf t d(on) t r t d(off) t f tu r n - o n d e l ay t i m e rise time off-voltage rise time fall time v dd =500 v, i d = 1.25 a, r g =4.7 , v gs =10 v (see figure 4 ) - 15 7.5 3 2 3 9 - ns ns ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =800 v, i d = 2.5 a v gs =10 v (see figure 3 ) - 18 3 .6 9.2 - nc nc nc
STD4NK100Z electrical characteristics doc id 022821 rev 1 5/12 the built-in back-to-back zener diodes have specifically been designed to enhance not only the device?s esd capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. in this respect the zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device?s integrity. these integrated zener diodes thus avoid the usage of external components. table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 2.2 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) - 8.8 a v sd (2) 2. pulsed: pulse duration= 3 00 s, duty cycle 1.5% forward on voltage i sd = 2.2 a, v gs =0 - 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 2.5 a, di/dt = 100 a/s, v dd =100 v (see figure 2 ) - 584 2. 3 8 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 2.5 a, di/dt = 100 a/s, v dd =100 v, t j =150 c (see figure 2 ) - 628 2.5 8.1 ns c a table 8. gate-source zener diode symbol parameter test conditions min. typ. max. unit bv gso gate-source breakdown voltage igs= 1 ma (open drain) 3 0- v
test circuits STD4NK100Z 6/12 doc id 022821 rev 1 3 test circuits figure 2. switching times test circuit for resistive load figure 3. gate charge test circuit figure 4. test circuit for inductive load switching and diode recovery times figure 5. unclamped inductive load test circuit figure 6. unclamped inductive waveform figure 7. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am01473v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
STD4NK100Z package mechanical data doc id 022821 rev 1 7/12 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark. table 9. dpak (to-252) mechanical data dim. mm min. typ. max. a2.20 2.40 a1 0.90 1.10 a2 0.0 3 0.2 3 b0.64 0.90 b4 5.20 5.40 c0.45 0.60 c2 0.48 0.60 d6.00 6.20 d1 5.10 e6.40 6.60 e1 4.70 e2.28 e1 4.40 4.60 h9. 3 5 10.10 l1 1.50 l1 2.80 l2 0.80 l4 0.60 1 r0.20 v2 0 8
package mechanical data STD4NK100Z 8/12 doc id 022821 rev 1 figure 8. dpak (to-252) drawing figure 9. dpak footprint (a) a. all dimensions are in millimeters 006 8 772_h 6.7 1.6 1.6 2.3 2.3 6.7 1. 8 3 am0 88 50v1
STD4NK100Z packaging mechanical data doc id 022821 rev 1 9/12 5 packaging mechanical data table 10. dpak (to-252) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 6.8 7 a 33 0 b0 10.4 10.6 b 1.5 b1 12.1 c 12.8 1 3 .2 d 1.5 1.6 d 20.2 d1 1.5 g 16.4 18.4 e 1.65 1.85 n 50 f 7.4 7.6 t 22.4 k0 2.55 2.75 p0 3 .9 4.1 base qty. 2500 p1 7.9 8.1 bulk qty. 2500 p2 1.9 2.1 r40 t0.25 0. 3 5 w 15.7 16. 3
packaging mechanical data STD4NK100Z 10/12 doc id 022821 rev 1 figure 10. tape for dpak (to-252) figure 11. reel for dpak (to-252) p1 a0 d1 p0 f w e d b0 k0 t u s er direction of feed p2 10 pitche s c u m u l a tive toler a nce on t a pe +/- 0.2 mm u s er direction of feed r bending r a di us b1 for m a chine ref. only incl u ding dr a ft a nd r a dii concentric a ro u nd b0 am0 88 52v1 top cover t a pe a d b f u ll r a di us g me asu red a t h ub c n reel dimen s ion s 40mm min. acce ss hole at s lot loc a tion t t a pe s lot in core for t a pe s t a rt 25 mm min. width am0 88 51v2
STD4NK100Z revision history doc id 022821 rev 1 11/12 6 revision history table 11. document revision history date revision changes 02-mar-2012 1 first release.
STD4NK100Z 12/12 doc id 022821 rev 1 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by two authorized st representatives, st products are not recommended, authorized or warranted for use in military, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2012 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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